Infineon Technologies - IPB120N03S4L03ATMA1

KEY Part #: K6419596

IPB120N03S4L03ATMA1 Verðlagning (USD) [120440stk lager]

  • 1 pcs$0.30710
  • 1,000 pcs$0.28172

Hlutanúmer:
IPB120N03S4L03ATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH TO263-3.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Eitt ár
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Hong Kong
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Díóða - Zener - Stakur, Thyristors - SCRs - mát, Smára - tvíhverfa (BJT) - fylki and Transistors - Tvíhverfur (BJT) - Single ...
Samkeppnisforskot:
We specialize in Infineon Technologies IPB120N03S4L03ATMA1 electronic components. IPB120N03S4L03ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB120N03S4L03ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB120N03S4L03ATMA1 Vörueiginleikar

Hlutanúmer : IPB120N03S4L03ATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH TO263-3
Röð : Automotive, AEC-Q101, OptiMOS™
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 120A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt : 2.2V @ 40µA
Hliðargjald (Qg) (Max) @ Vgs : 72nC @ 10V
Vgs (hámark) : ±16V
Inntaksrýmd (Ciss) (Max) @ Vds : 5300pF @ 25V
FET lögun : -
Dreifing orku (Max) : 79W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : D²PAK (TO-263AB)
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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