Toshiba Semiconductor and Storage - TK10V60W,LVQ

KEY Part #: K6418370

TK10V60W,LVQ Verðlagning (USD) [60727stk lager]

  • 1 pcs$0.67621
  • 2,500 pcs$0.67285

Hlutanúmer:
TK10V60W,LVQ
Framleiðandi:
Toshiba Semiconductor and Storage
Nákvæm lýsing:
MOSFET N-CH 600V 9.7A 5DFN.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
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Samkeppnisforskot:
We specialize in Toshiba Semiconductor and Storage TK10V60W,LVQ electronic components. TK10V60W,LVQ can be shipped within 24 hours after order. If you have any demands for TK10V60W,LVQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK10V60W,LVQ Vörueiginleikar

Hlutanúmer : TK10V60W,LVQ
Framleiðandi : Toshiba Semiconductor and Storage
Lýsing : MOSFET N-CH 600V 9.7A 5DFN
Röð : DTMOSIV
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 9.7A (Ta)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 380 mOhm @ 4.9A, 10V
Vgs (th) (Max) @ kt : 3.7V @ 500µA
Hliðargjald (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 700pF @ 300V
FET lögun : Super Junction
Dreifing orku (Max) : 88.3W (Tc)
Vinnuhitastig : 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : 4-DFN-EP (8x8)
Pakki / mál : 4-VSFN Exposed Pad

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