Hlutanúmer :
TK10V60W,LVQ
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET N-CH 600V 9.7A 5DFN
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
9.7A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 4.9A, 10V
Vgs (th) (Max) @ kt :
3.7V @ 500µA
Hliðargjald (Qg) (Max) @ Vgs :
20nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
700pF @ 300V
FET lögun :
Super Junction
Dreifing orku (Max) :
88.3W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
4-DFN-EP (8x8)
Pakki / mál :
4-VSFN Exposed Pad