Vishay Semiconductor Diodes Division - 1N6482HE3/96

KEY Part #: K6457745

1N6482HE3/96 Verðlagning (USD) [665064stk lager]

  • 1 pcs$0.05562
  • 6,000 pcs$0.05085

Hlutanúmer:
1N6482HE3/96
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE GEN PURP 600V 1A DO213AB. Rectifiers 600 Volt 1.0 Amp 30 Amp IFSM
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Díóða - Zener - Fylki, Díóða - leiðréttingar - stakir, Transistors - IGBTs - mát, Thyristors - SCR, Transistors - IGBTs - Single, Smára - tvíhverfa (BJT) - fylki, forspeglast and Transistors - IGBTs - Arrays ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division 1N6482HE3/96 electronic components. 1N6482HE3/96 can be shipped within 24 hours after order. If you have any demands for 1N6482HE3/96, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N6482HE3/96 Vörueiginleikar

Hlutanúmer : 1N6482HE3/96
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE GEN PURP 600V 1A DO213AB
Röð : SUPERECTIFIER®
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 600V
Núverandi - meðaltal leiðrétt (Io) : 1A
Spenna - Fram (Vf) (Max) @ Ef : 1.1V @ 1A
Hraði : Standard Recovery >500ns, > 200mA (Io)
Afturheimtur bata (trr) : -
Núverandi - Aftur leki @ Vr : 10µA @ 600V
Capacitance @ Vr, F : 8pF @ 4V, 1MHz
Festingargerð : Surface Mount
Pakki / mál : DO-213AB, MELF (Glass)
Birgir tæki pakki : DO-213AB
Rekstrarhiti - mótum : -65°C ~ 175°C

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