[12777stk lager]
- Hlutanúmer:
- IRFBE20L
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 800V 1.8A TO-262.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - RF, Díóða - breytileg getu, Thyristors - DIACs, SIDACs, Smára - tvíhverfa (BJT) - fylki, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix IRFBE20L electronic components. IRFBE20L can be shipped within 24 hours after order. If you have any demands for IRFBE20L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBE20L Vörueiginleikar
Hlutanúmer :
IRFBE20L
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 800V 1.8A TO-262
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1.8A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
6.5 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
530pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
-
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
I2PAK
Pakki / mál :
TO-262-3 Long Leads, I²Pak, TO-262AA
Nýjustu fréttir
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