GeneSiC Semiconductor - GA10SICP12-263

KEY Part #: K6394031

GA10SICP12-263 Verðlagning (USD) [3349stk lager]

  • 1 pcs$19.21305
  • 10 pcs$17.77033
  • 25 pcs$16.32929
  • 100 pcs$15.17669

Hlutanúmer:
GA10SICP12-263
Framleiðandi:
GeneSiC Semiconductor
Nákvæm lýsing:
TRANS SJT 1200V 25A TO263-7.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Kerfisstjóratæki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Transistors - sérstök tilgangur ...
Samkeppnisforskot:
We specialize in GeneSiC Semiconductor GA10SICP12-263 electronic components. GA10SICP12-263 can be shipped within 24 hours after order. If you have any demands for GA10SICP12-263, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA10SICP12-263 Vörueiginleikar

Hlutanúmer : GA10SICP12-263
Framleiðandi : GeneSiC Semiconductor
Lýsing : TRANS SJT 1200V 25A TO263-7
Röð : -
Hluti staða : Active
FET gerð : -
Tækni : SiC (Silicon Carbide Junction Transistor)
Afrennsli að uppspennu (Vdss) : 1200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 25A (Tc)
Drifspenna (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 100 mOhm @ 10A
Vgs (th) (Max) @ kt : -
Hliðargjald (Qg) (Max) @ Vgs : -
Vgs (hámark) : -
Inntaksrýmd (Ciss) (Max) @ Vds : 1403pF @ 800V
FET lögun : -
Dreifing orku (Max) : 170W (Tc)
Vinnuhitastig : 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : D2PAK (7-Lead)
Pakki / mál : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA