IXFH80N65X2-4 Verðlagning (USD) [9197stk lager]
- 1 pcs$4.48104
- Hlutanúmer:
- IXFH80N65X2-4
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Transistors - JFETs, Transistors - Tvíhverfur (BJT) - Single, Transistors - Forritanleg sameining, Díóða - Zener - Stakur, Transistors - IGBTs - mát, Thyristors - SCRs - mát and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in IXYS IXFH80N65X2-4 electronic components. IXFH80N65X2-4 can be shipped within 24 hours after order. If you have any demands for IXFH80N65X2-4, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH80N65X2-4 Vörueiginleikar
Hlutanúmer :
IXFH80N65X2-4
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH
Röð :
HiPerFET™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
80A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
38 mOhm @ 500mA, 10V
Vgs (th) (Max) @ kt :
5V @ 4mA
Hliðargjald (Qg) (Max) @ Vgs :
140nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
8300pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
890W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-247-4L
Pakki / mál :
TO-247-4
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