NXP USA Inc. - A2G35S160-01SR3

KEY Part #: K6466587

A2G35S160-01SR3 Verðlagning (USD) [802stk lager]

  • 1 pcs$57.85920

Hlutanúmer:
A2G35S160-01SR3
Framleiðandi:
NXP USA Inc.
Nákvæm lýsing:
AIRFAST RF POWER GAN TRANSISTOR.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Díóða - leiðréttingar - fylki, Transistors - FETs, MOSFETs - Single, Transistors - Tvíhverfur (BJT) - RF, Transistors - FETs, MOSFETs - RF, Smára - tvíhverfa (BJT) - fylki and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
Samkeppnisforskot:
We specialize in NXP USA Inc. A2G35S160-01SR3 electronic components. A2G35S160-01SR3 can be shipped within 24 hours after order. If you have any demands for A2G35S160-01SR3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

A2G35S160-01SR3 Vörueiginleikar

Hlutanúmer : A2G35S160-01SR3
Framleiðandi : NXP USA Inc.
Lýsing : AIRFAST RF POWER GAN TRANSISTOR
Röð : -
Hluti staða : Active
Transistor Type : LDMOS
Tíðni : 3.4GHz ~ 3.6GHz
Aflaðu : 15.7dB
Spenna - Próf : 48V
Núverandi einkunn : -
Hávaðamynd : -
Núverandi - próf : 190mA
Kraftur - framleiðsla : 51dBm
Spenna - hlutfall : 125V
Pakki / mál : NI-400S-2S
Birgir tæki pakki : NI-400S-2S

Þú gætir líka haft áhuga á
  • NPTB00004A

    M/A-Com Technology Solutions

    HEMT N-CH 28V 5W DC-6GHZ 8SOIC.

  • 2SK3079ATE12LQ

    Toshiba Semiconductor and Storage

    MOSF RF N CH 10V PW-X.

  • LET9045S

    STMicroelectronics

    TRANSISTOR RF POWER N-CH 80V 9A.

  • PD55025S-E

    STMicroelectronics

    FET RF 40V 500MHZ PWRSO10.

  • PD57006S-E

    STMicroelectronics

    FET RF 65V 945MHZ PWRSO-10.

  • PD57030S-E

    STMicroelectronics

    FET RF 65V 945MHZ PWRSO10.