Hlutanúmer :
SIR616DP-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 200V 20.2A SO-8
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
20.2A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
50.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
28nC @ 7.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
1450pF @ 100V
Dreifing orku (Max) :
52W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SO-8
Pakki / mál :
PowerPAK® SO-8