SI4463CDY-T1-GE3 Verðlagning (USD) [211203stk lager]
- 1 pcs$0.17513
- 2,500 pcs$0.16445
- Hlutanúmer:
- SI4463CDY-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CHAN 2.5V SO8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Díóða - Zener - Stakur, Transistors - Tvíhverfur (BJT) - RF, Díóða - breytileg getu, Transistors - IGBTs - Arrays, Thyristors - SCR, Díóða - RF and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI4463CDY-T1-GE3 electronic components. SI4463CDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4463CDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4463CDY-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI4463CDY-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CHAN 2.5V SO8
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
13.6A (Ta), 49A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
2.5V, 10V
Rds On (Max) @ Id, Vgs :
8 mOhm @ 13A, 10V
Vgs (th) (Max) @ kt :
1.4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
162nC @ 10V
Vgs (hámark) :
±12V
Inntaksrýmd (Ciss) (Max) @ Vds :
4250pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
2.7W (Ta), 5W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SO
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Nýjustu fréttir
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