[3822stk lager]
- Hlutanúmer:
- SI1029X-T1-E3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N/P-CH 60V SOT563F.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Transistors - IGBTs - mát, Díóða - Zener - Stakur, Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - RF, Thyristors - DIACs, SIDACs, Díóða - breytileg getu and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI1029X-T1-E3 electronic components. SI1029X-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI1029X-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1029X-T1-E3 Vörueiginleikar
Hlutanúmer :
SI1029X-T1-E3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N/P-CH 60V SOT563F
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N and P-Channel
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
305mA, 190mA
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 500mA, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
0.75nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
30pF @ 25V
Afl - Max :
250mW
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
SOT-563, SOT-666
Birgir tæki pakki :
SC-89-6
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