[1418stk lager]
- Hlutanúmer:
- SI3812DV-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 20V 2A 6-TSOP.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - Single, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - Single, Díóða - leiðréttingar - fylki, Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Fylki and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI3812DV-T1-GE3 electronic components. SI3812DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3812DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3812DV-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI3812DV-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 20V 2A 6-TSOP
Röð :
LITTLE FOOT®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
2A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
125 mOhm @ 2.4A, 4.5V
Vgs (th) (Max) @ kt :
600mV @ 250µA (Min)
Hliðargjald (Qg) (Max) @ Vgs :
4nC @ 4.5V
Vgs (hámark) :
±12V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
FET lögun :
Schottky Diode (Isolated)
Dreifing orku (Max) :
830mW (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
6-TSOP
Pakki / mál :
SOT-23-6 Thin, TSOT-23-6
Nýjustu fréttir
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