SI2323DS-T1-E3 Verðlagning (USD) [353190stk lager]
- 1 pcs$0.10472
- 3,000 pcs$0.08901
- Hlutanúmer:
- SI2323DS-T1-E3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 20V 3.7A SOT23-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Transistors - JFETs, Thyristors - TRIACs, Díóða - leiðréttingar - stakir, Díóða - Bríta leiðréttingar, Díóða - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Díóða - breytileg getu ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI2323DS-T1-E3 electronic components. SI2323DS-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI2323DS-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2323DS-T1-E3 Vörueiginleikar
Hlutanúmer :
SI2323DS-T1-E3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 20V 3.7A SOT23-3
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.7A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
39 mOhm @ 4.7A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
19nC @ 4.5V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
1020pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
750mW (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
SOT-23-3 (TO-236)
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
Nýjustu fréttir
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