[3753stk lager]
- Hlutanúmer:
- IRF9910
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET 2N-CH 20V 10A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - DIACs, SIDACs, Thyristors - SCRs - mát, Transistors - Forritanleg sameining, Smára - tvíhverfa (BJT) - fylki, Thyristors - SCR and Díóða - Bríta leiðréttingar ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF9910 electronic components. IRF9910 can be shipped within 24 hours after order. If you have any demands for IRF9910, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF9910 Vörueiginleikar
Hlutanúmer :
IRF9910
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET 2N-CH 20V 10A 8-SOIC
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
10A, 12A
Rds On (Max) @ Id, Vgs :
13.4 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
2.55V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
11nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
900pF @ 10V
Afl - Max :
2W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Birgir tæki pakki :
8-SO
Nýjustu fréttir
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