Vishay Semiconductor Diodes Division - MSE1PJHM3J/89A

KEY Part #: K6453386

MSE1PJHM3J/89A Verðlagning (USD) [984434stk lager]

  • 1 pcs$0.03757
  • 9,000 pcs$0.03304

Hlutanúmer:
MSE1PJHM3J/89A
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE GEN PURP 600V 1A MICROSMP. Rectifiers 1.0A, 600V, ESD PROTECTION, SM
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Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - RF, Díóða - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Forritanleg sameining, Transistors - Tvíhverfur (BJT) - RF, Díóða - breytileg getu, Thyristors - SCR and Transistors - IGBTs - Arrays ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MSE1PJHM3J/89A Vörueiginleikar

Hlutanúmer : MSE1PJHM3J/89A
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE GEN PURP 600V 1A MICROSMP
Röð : Automotive, AEC-Q101
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 600V
Núverandi - meðaltal leiðrétt (Io) : 1A
Spenna - Fram (Vf) (Max) @ Ef : 1.1V @ 1A
Hraði : Standard Recovery >500ns, > 200mA (Io)
Afturheimtur bata (trr) : 780ns
Núverandi - Aftur leki @ Vr : 1µA @ 600V
Capacitance @ Vr, F : 5pF @ 4V, 1MHz
Festingargerð : Surface Mount
Pakki / mál : DO-219AD
Birgir tæki pakki : MicroSMP (DO-219AD)
Rekstrarhiti - mótum : -55°C ~ 175°C

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