SI4435FDY-T1-GE3 Verðlagning (USD) [610452stk lager]
- 1 pcs$0.06059
- Hlutanúmer:
- SI4435FDY-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 30V 12.6A 8SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - Single, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Arrays and Transistors - FETs, MOSFETs - RF ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI4435FDY-T1-GE3 electronic components. SI4435FDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4435FDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4435FDY-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI4435FDY-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 30V 12.6A 8SOIC
Röð :
TrenchFET® Gen III
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12.6A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
19 mOhm @ 9A, 10V
Vgs (th) (Max) @ kt :
2.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1500pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
4.8W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SOIC
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Nýjustu fréttir
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