SI1926DL-T1-GE3 Verðlagning (USD) [575693stk lager]
- 1 pcs$0.06425
- 3,000 pcs$0.06069
- Hlutanúmer:
- SI1926DL-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2N-CH 60V 0.37A SOT363.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Forritanleg sameining, Thyristors - SCRs - mát, Transistors - FETs, MOSFETs - RF, Díóða - Bríta leiðréttingar, Transistors - JFETs, Transistors - FETs, MOSFETs - Single and Díóða - leiðréttingar - stakir ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI1926DL-T1-GE3 electronic components. SI1926DL-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1926DL-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1926DL-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI1926DL-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2N-CH 60V 0.37A SOT363
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
370mA
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 340mA, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
1.4nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
18.5pF @ 30V
Afl - Max :
510mW
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
6-TSSOP, SC-88, SOT-363
Birgir tæki pakki :
SC-70-6 (SOT-363)
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