Vishay Semiconductor Diodes Division - VS-GB100TH120U

KEY Part #: K6533233

VS-GB100TH120U Verðlagning (USD) [261stk lager]

  • 1 pcs$177.68022
  • 12 pcs$163.71967

Hlutanúmer:
VS-GB100TH120U
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
IGBT 1200V 200A 1136W INT-A-PAK.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - Arrays, Díóða - breytileg getu, Transistors - Forritanleg sameining, Kerfisstjóratæki, Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - Single and Transistors - FETs, MOSFETs - RF ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division VS-GB100TH120U electronic components. VS-GB100TH120U can be shipped within 24 hours after order. If you have any demands for VS-GB100TH120U, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB100TH120U Vörueiginleikar

Hlutanúmer : VS-GB100TH120U
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : IGBT 1200V 200A 1136W INT-A-PAK
Röð : -
Hluti staða : Active
IGBT gerð : NPT
Stillingar : Half Bridge
Spenna - sundurliðun útsendara (hámark) : 1200V
Núverandi - Safnari (Ic) (Max) : 200A
Afl - Max : 1136W
Vce (on) (Max) @ Vge, Ic : 3.6V @ 15V, 100A
Núverandi - Úrskurður safnara (Max) : 5mA
Inntaksrýmd (Cies) @ Vce : 8.45nF @ 20V
Inntak : Standard
NTC Thermistor : No
Vinnuhitastig : -40°C ~ 150°C (TJ)
Festingargerð : Chassis Mount
Pakki / mál : Double INT-A-PAK (3 + 4)
Birgir tæki pakki : Double INT-A-PAK

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