SIHA4N80E-GE3 Verðlagning (USD) [38643stk lager]
- 1 pcs$1.01180
- Hlutanúmer:
- SIHA4N80E-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CHAN 800V FP TO-220.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Thyristors - DIACs, SIDACs, Díóða - leiðréttingar - fylki, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCR, Kerfisstjóratæki and Transistors - IGBTs - Arrays ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIHA4N80E-GE3 electronic components. SIHA4N80E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHA4N80E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHA4N80E-GE3 Vörueiginleikar
Hlutanúmer :
SIHA4N80E-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CHAN 800V FP TO-220
Röð :
E
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4.3A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.27 Ohm @ 2A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
622pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
69W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220 Full Pack
Pakki / mál :
TO-220-3 Full Pack
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