Infineon Technologies - FS35R12U1T4BPSA1

KEY Part #: K6532684

[1084stk lager]


    Hlutanúmer:
    FS35R12U1T4BPSA1
    Framleiðandi:
    Infineon Technologies
    Nákvæm lýsing:
    MOD IGBT LOW PWR SMART1-1.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Transistors - sérstök tilgangur, Thyristors - SCR, Transistors - IGBTs - Single, Transistors - Tvíhverfur (BJT) - RF, Smára - tvíhverfa (BJT) - fylki, Transistors - Tvíhverfur (BJT) - Single and Díóða - RF ...
    Samkeppnisforskot:
    We specialize in Infineon Technologies FS35R12U1T4BPSA1 electronic components. FS35R12U1T4BPSA1 can be shipped within 24 hours after order. If you have any demands for FS35R12U1T4BPSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FS35R12U1T4BPSA1 Vörueiginleikar

    Hlutanúmer : FS35R12U1T4BPSA1
    Framleiðandi : Infineon Technologies
    Lýsing : MOD IGBT LOW PWR SMART1-1
    Röð : -
    Hluti staða : Obsolete
    IGBT gerð : Trench Field Stop
    Stillingar : Full Bridge
    Spenna - sundurliðun útsendara (hámark) : 1200V
    Núverandi - Safnari (Ic) (Max) : 70A
    Afl - Max : 250W
    Vce (on) (Max) @ Vge, Ic : 2.25V @ 15V, 35A
    Núverandi - Úrskurður safnara (Max) : 1mA
    Inntaksrýmd (Cies) @ Vce : 2nF @ 25V
    Inntak : Standard
    NTC Thermistor : Yes
    Vinnuhitastig : -40°C ~ 150°C
    Festingargerð : Chassis Mount
    Pakki / mál : Module
    Birgir tæki pakki : Module

    Þú gætir líka haft áhuga á
    • CPV363M4K

      Vishay Semiconductor Diodes Division

      IGBT SIP MODULE 600V 6A IMS-2.

    • CPV362M4K

      Vishay Semiconductor Diodes Division

      IGBT SIP MODULE 600V 31 IMS-2.

    • CPV362M4U

      Vishay Semiconductor Diodes Division

      IGBT SIP MODULE 600V 3.9A IMS-2.

    • CPV363M4U

      Vishay Semiconductor Diodes Division

      IGBT SIP MODULE 600V 6.8A IMS-2.

    • A2C25S12M3-F

      STMicroelectronics

      IGBT TRENCH 1200V 25A ACEPACK2.

    • A2C35S12M3-F

      STMicroelectronics

      IGBT TRENCH 1200V 35A ACEPACK2.