Vishay Semiconductor Diodes Division - UH6PJ-M3/86A

KEY Part #: K6443914

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    Hlutanúmer:
    UH6PJ-M3/86A
    Framleiðandi:
    Vishay Semiconductor Diodes Division
    Nákvæm lýsing:
    DIODE GEN PURP 600V 6A TO277A.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - RF, Díóða - Zener - Stakur, Transistors - FETs, MOSFETs - Single, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - RF, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - RF and Transistors - Tvíhverfur (BJT) - Single ...
    Samkeppnisforskot:
    We specialize in Vishay Semiconductor Diodes Division UH6PJ-M3/86A electronic components. UH6PJ-M3/86A can be shipped within 24 hours after order. If you have any demands for UH6PJ-M3/86A, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    UH6PJ-M3/86A Vörueiginleikar

    Hlutanúmer : UH6PJ-M3/86A
    Framleiðandi : Vishay Semiconductor Diodes Division
    Lýsing : DIODE GEN PURP 600V 6A TO277A
    Röð : eSMP®
    Hluti staða : Obsolete
    Díóða gerð : Standard
    Spenna - DC snúningur (Vr) (Max) : 600V
    Núverandi - meðaltal leiðrétt (Io) : 6A
    Spenna - Fram (Vf) (Max) @ Ef : 3V @ 6A
    Hraði : Fast Recovery =< 500ns, > 200mA (Io)
    Afturheimtur bata (trr) : 45ns
    Núverandi - Aftur leki @ Vr : 10µA @ 600V
    Capacitance @ Vr, F : 30pF @ 4V, 1MHz
    Festingargerð : Surface Mount
    Pakki / mál : TO-277, 3-PowerDFN
    Birgir tæki pakki : TO-277A (SMPC)
    Rekstrarhiti - mótum : -55°C ~ 175°C

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