Vishay Semiconductor Diodes Division - RMPG06JHE3/73

KEY Part #: K6447971

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    Hlutanúmer:
    RMPG06JHE3/73
    Framleiðandi:
    Vishay Semiconductor Diodes Division
    Nákvæm lýsing:
    DIODE GEN PURP 600V 1A MPG06. Rectifiers 600 Volt 1.0A 200ns 40 Amp IFSM
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Transistors - JFETs, Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - RF, Transistors - sérstök tilgangur, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - FETs, MOSFETs - RF and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
    Samkeppnisforskot:
    We specialize in Vishay Semiconductor Diodes Division RMPG06JHE3/73 electronic components. RMPG06JHE3/73 can be shipped within 24 hours after order. If you have any demands for RMPG06JHE3/73, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RMPG06JHE3/73 Vörueiginleikar

    Hlutanúmer : RMPG06JHE3/73
    Framleiðandi : Vishay Semiconductor Diodes Division
    Lýsing : DIODE GEN PURP 600V 1A MPG06
    Röð : -
    Hluti staða : Obsolete
    Díóða gerð : Standard
    Spenna - DC snúningur (Vr) (Max) : 600V
    Núverandi - meðaltal leiðrétt (Io) : 1A
    Spenna - Fram (Vf) (Max) @ Ef : 1.3V @ 1A
    Hraði : Fast Recovery =< 500ns, > 200mA (Io)
    Afturheimtur bata (trr) : 200ns
    Núverandi - Aftur leki @ Vr : 5µA @ 600V
    Capacitance @ Vr, F : 6.6pF @ 4V, 1MHz
    Festingargerð : Through Hole
    Pakki / mál : MPG06, Axial
    Birgir tæki pakki : MPG06
    Rekstrarhiti - mótum : -55°C ~ 150°C

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