DMJ70H900HJ3 Verðlagning (USD) [64604stk lager]
- 1 pcs$0.60827
- 75 pcs$0.60524
- Hlutanúmer:
- DMJ70H900HJ3
- Framleiðandi:
- Diodes Incorporated
- Nákvæm lýsing:
- MOSFET BVDSS 651V 800V TO251.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Díóða - Bríta leiðréttingar, Transistors - sérstök tilgangur, Díóða - breytileg getu, Transistors - Tvíhverfur (BJT) - Single, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - Single and Thyristors - SCR ...
- Samkeppnisforskot:
- We specialize in Diodes Incorporated DMJ70H900HJ3 electronic components. DMJ70H900HJ3 can be shipped within 24 hours after order. If you have any demands for DMJ70H900HJ3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMJ70H900HJ3 Vörueiginleikar
Hlutanúmer :
DMJ70H900HJ3
Framleiðandi :
Diodes Incorporated
Lýsing :
MOSFET BVDSS 651V 800V TO251
Röð :
Automotive, AEC-Q101
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
700V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
7A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
900 mOhm @ 1.5A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
18.4nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
603pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
68W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-251
Pakki / mál :
TO-251-3, IPak, Short Leads
Nýjustu fréttir
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