[2688stk lager]
- Hlutanúmer:
- RN1106MFV(TL3,T)
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- TRANS PREBIAS NPN 0.15W VESM.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Díóða - leiðréttingar - fylki, Transistors - IGBTs - mát, Transistors - sérstök tilgangur, Smára - tvíhverfa (BJT) - fylki, forspeglast and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage RN1106MFV(TL3,T) electronic components. RN1106MFV(TL3,T) can be shipped within 24 hours after order. If you have any demands for RN1106MFV(TL3,T), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1106MFV(TL3,T) Vörueiginleikar
Hlutanúmer :
RN1106MFV(TL3,T)
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
TRANS PREBIAS NPN 0.15W VESM
Röð :
-
Hluti staða :
Obsolete
Transistor Type :
NPN - Pre-Biased
Núverandi - Safnari (Ic) (Max) :
100mA
Spenna - sundurliðun útsendara (hámark) :
50V
Viðnám - stöð (R1) :
4.7 kOhms
Viðnám - Emitter Base (R2) :
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Núverandi - Úrskurður safnara (Max) :
500nA
Tíðni - umskipti :
-
Afl - Max :
150mW
Festingargerð :
Surface Mount
Pakki / mál :
SOT-723
Birgir tæki pakki :
VESM
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