[4142stk lager]
- Hlutanúmer:
- SI6562DQ-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N/P-CH 20V 8-TSSOP.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCRs - mát, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - Forritanleg sameining, Thyristors - TRIACs, Díóða - Zener - Fylki, Díóða - RF, Transistors - IGBTs - Arrays and Thyristors - DIACs, SIDACs ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI6562DQ-T1-GE3 electronic components. SI6562DQ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI6562DQ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI6562DQ-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI6562DQ-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N/P-CH 20V 8-TSSOP
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N and P-Channel
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
-
Rds On (Max) @ Id, Vgs :
30 mOhm @ 4.5A, 4.5V
Vgs (th) (Max) @ kt :
600mV @ 250µA (Min)
Hliðargjald (Qg) (Max) @ Vgs :
25nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
Afl - Max :
1W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-TSSOP (0.173", 4.40mm Width)
Birgir tæki pakki :
8-TSSOP
Nýjustu fréttir
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