SIHD5N50D-GE3 Verðlagning (USD) [77933stk lager]
- 1 pcs$0.50172
- Hlutanúmer:
- SIHD5N50D-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 500V 5.3A TO252 DPK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - breytileg getu, Díóða - leiðréttingar - fylki, Díóða - RF, Thyristors - TRIACs, Transistors - sérstök tilgangur and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIHD5N50D-GE3 electronic components. SIHD5N50D-GE3 can be shipped within 24 hours after order. If you have any demands for SIHD5N50D-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHD5N50D-GE3 Vörueiginleikar
Hlutanúmer :
SIHD5N50D-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 500V 5.3A TO252 DPK
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
500V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
5.3A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ kt :
5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
325pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
104W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-252AA
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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