Vishay Semiconductor Diodes Division - EGF1AHE3_A/I

KEY Part #: K6457361

EGF1AHE3_A/I Verðlagning (USD) [460696stk lager]

  • 1 pcs$0.08029

Hlutanúmer:
EGF1AHE3_A/I
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE GEN PURP 50V 1A DO214BA. Rectifiers 1A,50V,50NS AEC-Q101 Qualified
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Transistors - sérstök tilgangur, Transistors - JFETs, Thyristors - DIACs, SIDACs, Díóða - Zener - Fylki, Kerfisstjóratæki, Transistors - IGBTs - Arrays and Thyristors - SCR ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division EGF1AHE3_A/I electronic components. EGF1AHE3_A/I can be shipped within 24 hours after order. If you have any demands for EGF1AHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGF1AHE3_A/I Vörueiginleikar

Hlutanúmer : EGF1AHE3_A/I
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE GEN PURP 50V 1A DO214BA
Röð : Automotive, AEC-Q101, Superectifier®
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 50V
Núverandi - meðaltal leiðrétt (Io) : 1A
Spenna - Fram (Vf) (Max) @ Ef : 1V @ 1A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 50ns
Núverandi - Aftur leki @ Vr : 5µA @ 50V
Capacitance @ Vr, F : 15pF @ 4V, 1MHz
Festingargerð : Surface Mount
Pakki / mál : DO-214BA
Birgir tæki pakki : DO-214BA (GF1)
Rekstrarhiti - mótum : -65°C ~ 175°C

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