SIHD1K4N60E-GE3 Verðlagning (USD) [70849stk lager]
- 1 pcs$0.55189
- Hlutanúmer:
- SIHD1K4N60E-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH DPAK TO-252.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Fylki, Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - Bríta leiðréttingar, Transistors - Forritanleg sameining, Díóða - leiðréttingar - fylki and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIHD1K4N60E-GE3 electronic components. SIHD1K4N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHD1K4N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHD1K4N60E-GE3 Vörueiginleikar
Hlutanúmer :
SIHD1K4N60E-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH DPAK TO-252
Röð :
E
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4.2A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.45 Ohm @ 500mA, 10V
Vgs (th) (Max) @ kt :
5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
7.5nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
172pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
63W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-252AA
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
Nýjustu fréttir
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