[3498stk lager]
- Hlutanúmer:
- PHD16N03T,118
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- MOSFET N-CH 30V 13.1A DPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - RF, Díóða - breytileg getu, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Díóða - leiðréttingar - stakir and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. PHD16N03T,118 electronic components. PHD16N03T,118 can be shipped within 24 hours after order. If you have any demands for PHD16N03T,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHD16N03T,118 Vörueiginleikar
Hlutanúmer :
PHD16N03T,118
Framleiðandi :
NXP USA Inc.
Lýsing :
MOSFET N-CH 30V 13.1A DPAK
Röð :
TrenchMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
13.1A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
100 mOhm @ 13A, 10V
Vgs (th) (Max) @ kt :
4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
5.2nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
180pF @ 30V
FET lögun :
-
Dreifing orku (Max) :
32.6W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
DPAK
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
Nýjustu fréttir
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