IRF1018EPBF Verðlagning (USD) [69274stk lager]
- 1 pcs$0.57280
- 10 pcs$0.50799
- 100 pcs$0.40159
- 500 pcs$0.29460
- 1,000 pcs$0.23258
- Hlutanúmer:
- IRF1018EPBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 60V 79A TO-220AB.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Transistors - FETs, MOSFETs - RF, Transistors - Tvíhverfur (BJT) - Single, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - FETs, MOSFETs - Arrays, Smára - tvíhverfa (BJT) - fylki, Thyristors - TRIACs and Díóða - Zener - Fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF1018EPBF electronic components. IRF1018EPBF can be shipped within 24 hours after order. If you have any demands for IRF1018EPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF1018EPBF Vörueiginleikar
Hlutanúmer :
IRF1018EPBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 60V 79A TO-220AB
Röð :
HEXFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
79A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8.4 mOhm @ 47A, 10V
Vgs (th) (Max) @ kt :
4V @ 100µA
Hliðargjald (Qg) (Max) @ Vgs :
69nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2290pF @ 50V
FET lögun :
-
Dreifing orku (Max) :
110W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220AB
Pakki / mál :
TO-220-3
Nýjustu fréttir
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