Hlutanúmer :
TK39J60W5,S1VQ
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET N CH 600V 38.8A TO-3PN
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
38.8A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
65 mOhm @ 19.4A, 10V
Vgs (th) (Max) @ kt :
3.7V @ 1.9mA
Hliðargjald (Qg) (Max) @ Vgs :
135nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
4100pF @ 300V
FET lögun :
Super Junction
Dreifing orku (Max) :
270W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-3P(N)
Pakki / mál :
TO-3P-3, SC-65-3