HGT1S10N120BNS Verðlagning (USD) [28534stk lager]
- 1 pcs$1.45155
- 800 pcs$1.44433
- Hlutanúmer:
- HGT1S10N120BNS
- Framleiðandi:
- ON Semiconductor
- Nákvæm lýsing:
- IGBT 1200V 35A 298W TO263AB.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Díóða - RF, Smára - tvíhverfa (BJT) - fylki, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Díóða - breytileg getu, Thyristors - SCR and Transistors - FETs, MOSFETs - Arrays ...
- Samkeppnisforskot:
- We specialize in ON Semiconductor HGT1S10N120BNS electronic components. HGT1S10N120BNS can be shipped within 24 hours after order. If you have any demands for HGT1S10N120BNS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HGT1S10N120BNS Vörueiginleikar
Hlutanúmer :
HGT1S10N120BNS
Framleiðandi :
ON Semiconductor
Lýsing :
IGBT 1200V 35A 298W TO263AB
Röð :
-
Hluti staða :
Not For New Designs
IGBT gerð :
NPT
Spenna - sundurliðun útsendara (hámark) :
1200V
Núverandi - Safnari (Ic) (Max) :
35A
Núverandi - Safnari púlsaður (Icm) :
80A
Vce (on) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Afl - Max :
298W
Skiptir um orku :
320µJ (on), 800µJ (off)
Gerð innsláttar :
Standard
Hliðargjald :
100nC
Td (kveikt / slökkt) @ 25 ° C :
23ns/165ns
Próf ástand :
960V, 10A, 10 Ohm, 15V
Afturheimtur bata (trr) :
-
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Birgir tæki pakki :
TO-263AB
Nýjustu fréttir
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