Infineon Technologies - IRFB4110PBF

KEY Part #: K6415909

IRFB4110PBF Verðlagning (USD) [21647stk lager]

  • 1 pcs$1.44109
  • 10 pcs$1.28640
  • 100 pcs$1.00060
  • 500 pcs$0.81025
  • 1,000 pcs$0.68334

Hlutanúmer:
IRFB4110PBF
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 100V 120A TO-220AB.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Hong Kong
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Díóða - Bríta leiðréttingar, Thyristors - SCR, Transistors - FETs, MOSFETs - Single, Kerfisstjóratæki, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs and Díóða - leiðréttingar - stakir ...
Samkeppnisforskot:
We specialize in Infineon Technologies IRFB4110PBF electronic components. IRFB4110PBF can be shipped within 24 hours after order. If you have any demands for IRFB4110PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFB4110PBF Vörueiginleikar

Hlutanúmer : IRFB4110PBF
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 100V 120A TO-220AB
Röð : HEXFET®
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 120A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 75A, 10V
Vgs (th) (Max) @ kt : 4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 210nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 9620pF @ 50V
FET lögun : -
Dreifing orku (Max) : 370W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Through Hole
Birgir tæki pakki : TO-220AB
Pakki / mál : TO-220-3

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