[3496stk lager]
- Hlutanúmer:
- PHB112N06T,118
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- MOSFET N-CH 55V 75A D2PAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Transistors - IGBTs - mát, Thyristors - DIACs, SIDACs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Kerfisstjóratæki, Transistors - Forritanleg sameining, Díóða - Zener - Fylki and Díóða - leiðréttingar - fylki ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. PHB112N06T,118 electronic components. PHB112N06T,118 can be shipped within 24 hours after order. If you have any demands for PHB112N06T,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHB112N06T,118 Vörueiginleikar
Hlutanúmer :
PHB112N06T,118
Framleiðandi :
NXP USA Inc.
Lýsing :
MOSFET N-CH 55V 75A D2PAK
Röð :
TrenchMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
55V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
75A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8 mOhm @ 25A, 10V
Vgs (th) (Max) @ kt :
4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
87nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
4352pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
200W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D2PAK
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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