ON Semiconductor - 2SK3666-3-TB-E

KEY Part #: K6521306

2SK3666-3-TB-E Verðlagning (USD) [972762stk lager]

  • 1 pcs$0.03821
  • 3,000 pcs$0.03802

Hlutanúmer:
2SK3666-3-TB-E
Framleiðandi:
ON Semiconductor
Nákvæm lýsing:
JFET N-CH 10MA 200MW 3CP.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Díóða - breytileg getu, Díóða - Zener - Fylki, Transistors - FETs, MOSFETs - Arrays, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - RF, Thyristors - DIACs, SIDACs and Transistors - Tvíhverfur (BJT) - Single ...
Samkeppnisforskot:
We specialize in ON Semiconductor 2SK3666-3-TB-E electronic components. 2SK3666-3-TB-E can be shipped within 24 hours after order. If you have any demands for 2SK3666-3-TB-E, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2SK3666-3-TB-E Vörueiginleikar

Hlutanúmer : 2SK3666-3-TB-E
Framleiðandi : ON Semiconductor
Lýsing : JFET N-CH 10MA 200MW 3CP
Röð : -
Hluti staða : Active
FET gerð : N-Channel
Spenna - sundurliðun (V (BR) GSS) : -
Afrennsli að uppspennu (Vdss) : 30V
Núverandi - Drain (Idss) @ Vds (Vgs = 0) : 1.2mA @ 10V
Núverandi frárennsli (auðkenni) - Max : 10mA
Spenna - Cutoff (VGS slökkt) @ kt : 180mV @ 1µA
Inntaksrýmd (Ciss) (Max) @ Vds : 4pF @ 10V
Resistance - RDS (On) : 200 Ohms
Afl - Max : 200mW
Vinnuhitastig : 150°C (TJ)
Festingargerð : Surface Mount
Pakki / mál : TO-236-3, SC-59, SOT-23-3
Birgir tæki pakki : 3-CP

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