Framleiðandi :
Rohm Semiconductor
Lýsing :
MOSFET 2N-CH 30V 7A/11A HSML
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
7A, 11A
Rds On (Max) @ Id, Vgs :
17.9 mOhm @ 7A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
11.1nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
500pF @ 15V
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-UDFN Exposed Pad
Birgir tæki pakki :
HSML3030L10