Vishay Semiconductor Diodes Division - VS-10ETF10STRRPBF

KEY Part #: K6443061

VS-10ETF10STRRPBF Verðlagning (USD) [2920stk lager]

  • 800 pcs$0.90671

Hlutanúmer:
VS-10ETF10STRRPBF
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
DIODE GEN PURP 1KV 10A TO263AB.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Forritanleg sameining, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Transistors - IGBTs - mát, Thyristors - SCR, Transistors - FETs, MOSFETs - Arrays and Transistors - sérstök tilgangur ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division VS-10ETF10STRRPBF electronic components. VS-10ETF10STRRPBF can be shipped within 24 hours after order. If you have any demands for VS-10ETF10STRRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-10ETF10STRRPBF Vörueiginleikar

Hlutanúmer : VS-10ETF10STRRPBF
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : DIODE GEN PURP 1KV 10A TO263AB
Röð : -
Hluti staða : Discontinued at Digi-Key
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 1000V
Núverandi - meðaltal leiðrétt (Io) : 10A
Spenna - Fram (Vf) (Max) @ Ef : 1.33V @ 10A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 310ns
Núverandi - Aftur leki @ Vr : 100µA @ 1000V
Capacitance @ Vr, F : -
Festingargerð : Surface Mount
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Birgir tæki pakki : TO-263AB (D²PAK)
Rekstrarhiti - mótum : -40°C ~ 150°C

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