Hlutanúmer :
RN1426TE85LF
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
TRANS PREBIAS NPN 200MW SMINI
Transistor Type :
NPN - Pre-Biased
Núverandi - Safnari (Ic) (Max) :
800mA
Spenna - sundurliðun útsendara (hámark) :
50V
Viðnám - stöð (R1) :
1 kOhms
Viðnám - Emitter Base (R2) :
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
90 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 1mA, 50mA
Núverandi - Úrskurður safnara (Max) :
500nA
Tíðni - umskipti :
300MHz
Festingargerð :
Surface Mount
Pakki / mál :
TO-236-3, SC-59, SOT-23-3
Birgir tæki pakki :
S-Mini