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Ef staðsetning þín er ekki skráð skaltu velja eitt af eftirfarandi:

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  1. Heim
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  4. DDR4
  5. K4A4G165WF-BCTD

Samsung Semiconductor - K4A4G165WF-BCTD

KEY Part #: K7359587

[26724stk lager]

    Hlutanúmer:
    K4A4G165WF-BCTD
    Framleiðandi:
    Samsung Semiconductor
    Nákvæm lýsing:
    4 Gb 256M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
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    Eitt ár
    Flís frá:
    Hong Kong
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    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: HBM Flarebolt, LPDDR4, LPDDR5, HBM Aquabolt, GDDR6, GDDR5, LPDDR3 and SLC Nand ...
    Samkeppnisforskot:
    We specialize in Samsung Semiconductor K4A4G165WF-BCTD electronic components. K4A4G165WF-BCTD can be shipped within 24 hours after order. If you have any demands for K4A4G165WF-BCTD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G165WF-BCTD Vörueiginleikar

    Hlutanúmer : K4A4G165WF-BCTD
    Framleiðandi : Samsung Semiconductor
    Lýsing : 4 Gb 256M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
    Röð : DDR4
    Density : 4 Gb
    Org. : 256M x 16
    hraði : 2666 Mbps
    Spenna : 1.2 V
    Temp. : 0 ~ 85 °C
    pakki : 96FBGA
    vara Status : Mass Production

    Nýjustu fréttir

    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Z-SSD SZ985
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Evolving Mobile Solutions: Samsung at MWC 2018
    Automotive Driven by Small Packages Under the Hood
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
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    • K4A4G085WF-BCTD

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      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

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