[2760stk lager]
- Hlutanúmer:
- SPP07N60C3HKSA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 650V TO-220AB.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Stakur, Smára - tvíhverfa (BJT) - fylki, Díóða - leiðréttingar - stakir, Transistors - Tvíhverfur (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Thyristors - TRIACs and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies SPP07N60C3HKSA1 electronic components. SPP07N60C3HKSA1 can be shipped within 24 hours after order. If you have any demands for SPP07N60C3HKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPP07N60C3HKSA1 Vörueiginleikar
Hlutanúmer :
SPP07N60C3HKSA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 650V TO-220AB
Röð :
CoolMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
7.3A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 4.6A, 10V
Vgs (th) (Max) @ kt :
3.9V @ 350µA
Hliðargjald (Qg) (Max) @ Vgs :
27nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
790pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
83W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
PG-TO220-3
Pakki / mál :
TO-220-3
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