TPH1110ENH,L1Q Verðlagning (USD) [147789stk lager]
- 1 pcs$0.26284
- 5,000 pcs$0.26154
- Hlutanúmer:
- TPH1110ENH,L1Q
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- MOSFET N-CH 200V 7.2A 8SOP.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Díóða - RF, Smára - tvíhverfa (BJT) - fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - SCRs - mát and Díóða - Bríta leiðréttingar ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage TPH1110ENH,L1Q electronic components. TPH1110ENH,L1Q can be shipped within 24 hours after order. If you have any demands for TPH1110ENH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH1110ENH,L1Q Vörueiginleikar
Hlutanúmer :
TPH1110ENH,L1Q
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET N-CH 200V 7.2A 8SOP
Röð :
U-MOSVIII-H
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
7.2A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
114 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ kt :
4V @ 200µA
Hliðargjald (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
600pF @ 100V
FET lögun :
-
Dreifing orku (Max) :
1.6W (Ta), 42W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SOP Advance (5x5)
Pakki / mál :
8-PowerVDFN
Nýjustu fréttir
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