EPC2107ENGRT Verðlagning (USD) [107742stk lager]
- 1 pcs$0.37254
- 5,000 pcs$0.37069
- Hlutanúmer:
- EPC2107ENGRT
- Framleiðandi:
- EPC
- Nákvæm lýsing:
- GAN TRANS 3N-CH 100V BUMPED DIE.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - mát, Transistors - Tvíhverfur (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Díóða - breytileg getu, Thyristors - DIACs, SIDACs, Thyristors - SCR and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in EPC EPC2107ENGRT electronic components. EPC2107ENGRT can be shipped within 24 hours after order. If you have any demands for EPC2107ENGRT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2107ENGRT Vörueiginleikar
Hlutanúmer :
EPC2107ENGRT
Framleiðandi :
EPC
Lýsing :
GAN TRANS 3N-CH 100V BUMPED DIE
Röð :
eGaN®
Hluti staða :
Active
FET gerð :
3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET lögun :
GaNFET (Gallium Nitride)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1.7A, 500mA
Rds On (Max) @ Id, Vgs :
320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs (th) (Max) @ kt :
2.5V @ 100µA, 2.5V @ 20µA
Hliðargjald (Qg) (Max) @ Vgs :
0.16nC @ 5V, 0.044nC @ 5V
Inntaksrýmd (Ciss) (Max) @ Vds :
16pF @ 50V, 7pF @ 50V
Afl - Max :
-
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
9-VFBGA
Birgir tæki pakki :
9-BGA (1.35x1.35)
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