Infineon Technologies - IPB05N03LA G

KEY Part #: K6409895

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    Hlutanúmer:
    IPB05N03LA G
    Framleiðandi:
    Infineon Technologies
    Nákvæm lýsing:
    MOSFET N-CH 25V 80A D2PAK.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Forritanleg sameining, Transistors - JFETs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - Zener - Stakur, Díóða - leiðréttingar - stakir, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - Single and Thyristors - DIACs, SIDACs ...
    Samkeppnisforskot:
    We specialize in Infineon Technologies IPB05N03LA G electronic components. IPB05N03LA G can be shipped within 24 hours after order. If you have any demands for IPB05N03LA G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPB05N03LA G Vörueiginleikar

    Hlutanúmer : IPB05N03LA G
    Framleiðandi : Infineon Technologies
    Lýsing : MOSFET N-CH 25V 80A D2PAK
    Röð : OptiMOS™
    Hluti staða : Obsolete
    FET gerð : N-Channel
    Tækni : MOSFET (Metal Oxide)
    Afrennsli að uppspennu (Vdss) : 25V
    Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 80A (Tc)
    Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 4.6 mOhm @ 55A, 10V
    Vgs (th) (Max) @ kt : 2V @ 50µA
    Hliðargjald (Qg) (Max) @ Vgs : 25nC @ 5V
    Vgs (hámark) : ±20V
    Inntaksrýmd (Ciss) (Max) @ Vds : 3110pF @ 15V
    FET lögun : -
    Dreifing orku (Max) : 94W (Tc)
    Vinnuhitastig : -55°C ~ 175°C (TJ)
    Festingargerð : Surface Mount
    Birgir tæki pakki : PG-TO263-3-2
    Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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