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Ef staðsetning þín er ekki skráð skaltu velja eitt af eftirfarandi:

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  5. 1N8030-GA

GeneSiC Semiconductor - 1N8030-GA

KEY Part #: K6428136

1N8030-GA Verðlagning (USD) [488stk lager]

  • 1 pcs$89.56064
  • 10 pcs$85.23848
  • 25 pcs$82.15037
Hlutanúmer:
1N8030-GA
Framleiðandi:
GeneSiC Semiconductor
Nákvæm lýsing:
DIODE SCHOTTKY 650V 750MA TO257.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Thyristors - SCRs - mát, Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - breytileg getu, Transistors - Forritanleg sameining, Díóða - Zener - Stakur and Thyristors - TRIACs ...
Samkeppnisforskot:
We specialize in GeneSiC Semiconductor 1N8030-GA electronic components. 1N8030-GA can be shipped within 24 hours after order. If you have any demands for 1N8030-GA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N8030-GA Vörueiginleikar

Hlutanúmer : 1N8030-GA
Framleiðandi : GeneSiC Semiconductor
Lýsing : DIODE SCHOTTKY 650V 750MA TO257
Röð : -
Hluti staða : Obsolete
Díóða gerð : Silicon Carbide Schottky
Spenna - DC snúningur (Vr) (Max) : 650V
Núverandi - meðaltal leiðrétt (Io) : 750mA
Spenna - Fram (Vf) (Max) @ Ef : 1.39V @ 750mA
Hraði : No Recovery Time > 500mA (Io)
Afturheimtur bata (trr) : 0ns
Núverandi - Aftur leki @ Vr : 5µA @ 650V
Capacitance @ Vr, F : 76pF @ 1V, 1MHz
Festingargerð : Through Hole
Pakki / mál : TO-257-3
Birgir tæki pakki : TO-257
Rekstrarhiti - mótum : -55°C ~ 250°C
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