SI8261BAC-C-ISR Verðlagning (USD) [74816stk lager]
- 1 pcs$0.52524
- 2,500 pcs$0.52262
- Hlutanúmer:
- SI8261BAC-C-ISR
- Framleiðandi:
- Silicon Labs
- Nákvæm lýsing:
- DGTL ISO 3.75KV GATE DRVR 8SOIC. Gate Drivers 3.75 kV opto-driver replacement in SOIC8
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Optoisolators - Triac, SCR Output, Sérstakur tilgangur, Einangrunarmenn - hliðarstjórar, Optoisolators - Transistor, Photovoltaic Output, Optoisolators - Logic Output and Stafrænir einangrarar ...
- Samkeppnisforskot:
- We specialize in Silicon Labs SI8261BAC-C-ISR electronic components. SI8261BAC-C-ISR can be shipped within 24 hours after order. If you have any demands for SI8261BAC-C-ISR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8261BAC-C-ISR Vörueiginleikar
Hlutanúmer :
SI8261BAC-C-ISR
Framleiðandi :
Silicon Labs
Lýsing :
DGTL ISO 3.75KV GATE DRVR 8SOIC
Röð :
Automotive, AEC-Q100
Hluti staða :
Active
Tækni :
Capacitive Coupling
Fjöldi rása :
1
Spenna - Einangrun :
3750Vrms
Algengur skammvinnur tímabundinn ónæmi (mín.) :
35kV/µs
Töf á fjölgun tpLH / tpHL (Max) :
60ns, 50ns
Pulse Breidd röskun (Max) :
28ns
Rise / Fall Time (Typ) :
5.5ns, 8.5ns
Straumur - framleiðsla mikil, lítil :
500mA, 1.2A
Núverandi - hámarksafköst :
4A
Spenna - Fram (Vf) (Typ) :
2.8V (Max)
Straumur - DC áfram (Ef) (Max) :
30mA
Spenna - Framboð :
6.5V ~ 30V
Vinnuhitastig :
-40°C ~ 125°C
Festingargerð :
Surface Mount
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Birgir tæki pakki :
8-SOIC
Samþykki :
CQC, CSA, UR, VDE
Nýjustu fréttir
Þú gætir líka haft áhuga á
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MAX6504UKP005+T
Maxim Integrated
IC TEMP SWITCH SOT23-5. Board Mount Temperature Sensors 2.7-5.5V uPower Temperature Switch
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-
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SI8261BAC-C-ISR
Silicon Labs
DGTL ISO 3.75KV GATE DRVR 8SOIC. Gate Drivers 3.75 kV opto-driver replacement in SOIC8
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