Microsemi Corporation - JANTXV1N6629US

KEY Part #: K6447637

JANTXV1N6629US Verðlagning (USD) [3501stk lager]

  • 1 pcs$13.67618
  • 100 pcs$13.60814

Hlutanúmer:
JANTXV1N6629US
Framleiðandi:
Microsemi Corporation
Nákvæm lýsing:
DIODE GEN PURP 800V 1.4A D5B. Rectifiers Rectifier
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - breytileg getu, Transistors - FETs, MOSFETs - Arrays, Díóða - leiðréttingar - stakir, Díóða - RF, Transistors - FETs, MOSFETs - RF, Transistors - Tvíhverfur (BJT) - RF, Thyristors - SCR and Thyristors - DIACs, SIDACs ...
Samkeppnisforskot:
We specialize in Microsemi Corporation JANTXV1N6629US electronic components. JANTXV1N6629US can be shipped within 24 hours after order. If you have any demands for JANTXV1N6629US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTXV1N6629US Vörueiginleikar

Hlutanúmer : JANTXV1N6629US
Framleiðandi : Microsemi Corporation
Lýsing : DIODE GEN PURP 800V 1.4A D5B
Röð : -
Hluti staða : Active
Díóða gerð : Standard
Spenna - DC snúningur (Vr) (Max) : 800V
Núverandi - meðaltal leiðrétt (Io) : 1.4A
Spenna - Fram (Vf) (Max) @ Ef : 1.4V @ 1.4A
Hraði : Fast Recovery =< 500ns, > 200mA (Io)
Afturheimtur bata (trr) : 60ns
Núverandi - Aftur leki @ Vr : 2µA @ 800V
Capacitance @ Vr, F : 40pF @ 10V, 1MHz
Festingargerð : Surface Mount
Pakki / mál : SQ-MELF, E
Birgir tæki pakki : D-5B
Rekstrarhiti - mótum : -65°C ~ 150°C

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