SCTH90N65G2V-7 Verðlagning (USD) [1983stk lager]
- 1 pcs$21.84043
- Hlutanúmer:
- SCTH90N65G2V-7
- Framleiðandi:
- STMicroelectronics
- Nákvæm lýsing:
- SILICON CARBIDE POWER MOSFET 650.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - breytileg getu, Transistors - Forritanleg sameining, Díóða - Zener - Fylki, Díóða - Bríta leiðréttingar, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs - mát, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in STMicroelectronics SCTH90N65G2V-7 electronic components. SCTH90N65G2V-7 can be shipped within 24 hours after order. If you have any demands for SCTH90N65G2V-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCTH90N65G2V-7 Vörueiginleikar
Hlutanúmer :
SCTH90N65G2V-7
Framleiðandi :
STMicroelectronics
Lýsing :
SILICON CARBIDE POWER MOSFET 650
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
SiCFET (Silicon Carbide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
90A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
26 mOhm @ 50A, 18V
Vgs (th) (Max) @ kt :
5V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
157nC @ 18V
Vgs (hámark) :
+22V, -10V
Inntaksrýmd (Ciss) (Max) @ Vds :
3300pF @ 400V
FET lögun :
-
Dreifing orku (Max) :
330W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
H2PAK-7
Pakki / mál :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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