[9435stk lager]
- Hlutanúmer:
- GT10J312(Q)
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- IGBT 600V 10A 60W TO220SM.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Thyristors - DIACs, SIDACs, Transistors - IGBTs - mát, Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - TRIACs, Díóða - RF and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage GT10J312(Q) electronic components. GT10J312(Q) can be shipped within 24 hours after order. If you have any demands for GT10J312(Q), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GT10J312(Q) Vörueiginleikar
Hlutanúmer :
GT10J312(Q)
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
IGBT 600V 10A 60W TO220SM
Röð :
-
Hluti staða :
Obsolete
IGBT gerð :
-
Spenna - sundurliðun útsendara (hámark) :
600V
Núverandi - Safnari (Ic) (Max) :
10A
Núverandi - Safnari púlsaður (Icm) :
20A
Vce (on) (Max) @ Vge, Ic :
2.7V @ 15V, 10A
Afl - Max :
60W
Skiptir um orku :
-
Gerð innsláttar :
Standard
Hliðargjald :
-
Td (kveikt / slökkt) @ 25 ° C :
400ns/400ns
Próf ástand :
300V, 10A, 100 Ohm, 15V
Afturheimtur bata (trr) :
200ns
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
Birgir tæki pakki :
TO-220SM
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