Vishay Semiconductor Diodes Division - VS-GB50TP120N

KEY Part #: K6533281

VS-GB50TP120N Verðlagning (USD) [1278stk lager]

  • 1 pcs$33.87746
  • 24 pcs$32.26421

Hlutanúmer:
VS-GB50TP120N
Framleiðandi:
Vishay Semiconductor Diodes Division
Nákvæm lýsing:
IGBT 1200V 100A 446W INT-A-PAK.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Transistors - sérstök tilgangur, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - breytileg getu, Smára - tvíhverfa (BJT) - fylki, Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Fylki and Díóða - Bríta leiðréttingar ...
Samkeppnisforskot:
We specialize in Vishay Semiconductor Diodes Division VS-GB50TP120N electronic components. VS-GB50TP120N can be shipped within 24 hours after order. If you have any demands for VS-GB50TP120N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB50TP120N Vörueiginleikar

Hlutanúmer : VS-GB50TP120N
Framleiðandi : Vishay Semiconductor Diodes Division
Lýsing : IGBT 1200V 100A 446W INT-A-PAK
Röð : -
Hluti staða : Active
IGBT gerð : -
Stillingar : Half Bridge
Spenna - sundurliðun útsendara (hámark) : 1200V
Núverandi - Safnari (Ic) (Max) : 100A
Afl - Max : 446W
Vce (on) (Max) @ Vge, Ic : 2.15V @ 15V, 50A
Núverandi - Úrskurður safnara (Max) : 5mA
Inntaksrýmd (Cies) @ Vce : 4.29nF @ 25V
Inntak : Standard
NTC Thermistor : No
Vinnuhitastig : 150°C (TJ)
Festingargerð : Chassis Mount
Pakki / mál : INT-A-PAK (3 + 4)
Birgir tæki pakki : INT-A-PAK

Þú gætir líka haft áhuga á
  • VS-ETL015Y120H

    Vishay Semiconductor Diodes Division

    IGBT 1200V 22A 89W EMIPAK-2B. Rectifiers 15A Dbl Interleaved Boost Converter

  • VS-ETF150Y65U

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • VS-ETF075Y60U

    Vishay Semiconductor Diodes Division

    IGBT 600V 109A 294W EMIPAK-2B.

  • APT85GR120JD60

    Microsemi Corporation

    IGBT MODULE 1200V 116A ISOTOP.

  • APTGT100DU60TG

    Microsemi Corporation

    POWER MOD IGBT TRENCH DL SRC SP4.

  • APTCV60HM45RCT3G

    Microsemi Corporation

    POWER MOD IGBT3 FULL BRIDGE SP3.