Vishay Semiconductor Diodes Division - NSB8MTHE3/45

KEY Part #: K6445655

[2033stk lager]


    Hlutanúmer:
    NSB8MTHE3/45
    Framleiðandi:
    Vishay Semiconductor Diodes Division
    Nákvæm lýsing:
    DIODE GEN PURP 1KV 8A TO263AB.
    Venjulegur framleiðslutími framleiðanda:
    Á lager
    Geymsluþol:
    Eitt ár
    Flís frá:
    Hong Kong
    RoHS:
    Greiðslumáti:
    Sendingarleið:
    Fjölskylduflokkar:
    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - RF, Transistors - JFETs, Smára - tvíhverfa (BJT) - fylki, Transistors - sérstök tilgangur, Transistors - FETs, MOSFETs - RF and Díóða - breytileg getu ...
    Samkeppnisforskot:
    We specialize in Vishay Semiconductor Diodes Division NSB8MTHE3/45 electronic components. NSB8MTHE3/45 can be shipped within 24 hours after order. If you have any demands for NSB8MTHE3/45, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NSB8MTHE3/45 Vörueiginleikar

    Hlutanúmer : NSB8MTHE3/45
    Framleiðandi : Vishay Semiconductor Diodes Division
    Lýsing : DIODE GEN PURP 1KV 8A TO263AB
    Röð : -
    Hluti staða : Discontinued at Digi-Key
    Díóða gerð : Standard
    Spenna - DC snúningur (Vr) (Max) : 1000V
    Núverandi - meðaltal leiðrétt (Io) : 8A
    Spenna - Fram (Vf) (Max) @ Ef : 1.1V @ 8A
    Hraði : Standard Recovery >500ns, > 200mA (Io)
    Afturheimtur bata (trr) : -
    Núverandi - Aftur leki @ Vr : 10µA @ 1000V
    Capacitance @ Vr, F : 55pF @ 4V, 1MHz
    Festingargerð : Surface Mount
    Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Birgir tæki pakki : TO-263AB
    Rekstrarhiti - mótum : -55°C ~ 150°C

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