BSC750N10NDGATMA1 Verðlagning (USD) [148661stk lager]
- 1 pcs$0.24881
- Hlutanúmer:
- BSC750N10NDGATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET 2N-CH 100V 3.2A 8TDSON.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Transistors - Tvíhverfur (BJT) - RF, Díóða - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSC750N10NDGATMA1 electronic components. BSC750N10NDGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC750N10NDGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC750N10NDGATMA1 Vörueiginleikar
Hlutanúmer :
BSC750N10NDGATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET 2N-CH 100V 3.2A 8TDSON
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Standard
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.2A
Rds On (Max) @ Id, Vgs :
75 mOhm @ 13A, 10V
Vgs (th) (Max) @ kt :
4V @ 12µA
Hliðargjald (Qg) (Max) @ Vgs :
11nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
720pF @ 50V
Afl - Max :
26W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-PowerVDFN
Birgir tæki pakki :
PG-TDSON-8 Dual
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